www.kersemi.com 1 01/22/02 IRFR3911 irfu3911 smps mosfet hexfet ? power mosfet v dss r ds(on) max i d 100v 0.115 ? 14a parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 14 i d @ t c = 100c continuous drain current, v gs @ 10v 9.5 a i dm pulsed drain current 56 p d @t c = 25 c power dissipation 56 w linear derating factor 0.37 w/ c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt 7.1 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings d-pak IRFR3911 i-pak irfu3911 high frequency dc-dc converters benefits applications low gate-to-drain charge to reduce switching losses fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) fully characterized avalanche voltage and current parameter typ. max. units r jc junction-to-case ??? 2.7 r ja junction-to-ambient (pcb mount)* ??? 50 c/w r ja junction-to-ambient ??? 110 thermal resistance pd - 94272
2 www.kersemi.com IRFR3911/irfu3911 parameter min. typ. max. units conditions g fs forward transconductance 9.6 ??? ??? sv ds = 50v, i d = 8.4a q g total gate charge ??? 21 32 i d = 8.4a q gs gate-to-source charge ??? 4.3 6.5 nc v ds = 80v q gd gate-to-drain ("miller") charge ??? 6.6 9.9 v gs = 10v t d(on) turn-on delay time ??? 7.9 ??? v dd = 500v t r rise time ??? 26 ??? i d = 8.4a t d(off) turn-off delay time ??? 52 ??? r g = 22 ? t f fall time ??? 25 ??? v gs = 10v c iss input capacitance ??? 740 ??? v gs = 0v c oss output capacitance ??? 110 ??? v ds = 25v c rss reverse transfer capacitance ??? 18 ??? pf ? = 1.0mhz c oss output capacitance ??? 700 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 61 ??? v gs = 0v, v ds = 80v, ? = 1.0mhz c oss eff. effective output capacitance ??? 130 ??? v gs = 0v, v ds = 0v to 80v dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ??? 68 mj i ar avalanche current ??? 8.4 a e ar repetitive avalanche energy ??? 0.0056 mj avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25 c, i s = 8.4a, v gs = 0v t rr reverse recovery time ??? 86 ??? ns t j = 25 c, i f = 8.4a q rr reverse recoverycharge ??? 290 ??? nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) diode characteristics 14 56 a static @ t j = 25 c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 ??? ??? vv gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.11 ??? v/ c reference to 25 c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.115 ? v gs = 10v, i d = 8.4a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a ??? ??? 20 a v ds = 100v, v gs = 0v ??? ??? 250 v ds = 80v, v gs = 0v, t j = 150 c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v i gss i dss drain-to-source leakage current
www.kersemi.com 3 IRFR3911/irfu3911 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 3.0 5.0 7.0 9.0 11.0 13.0 15.0 v gs , gate-to-source voltage (v) 1.00 10.00 100.00 i d , drain-to-source current ( ) t j = 25 c t j = 175 c v ds = 15v 20s pulse width 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , drain-to-source current (a) 4.5v 20s pulse width tj = 25 c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , drain-to-source current (a) 4.5v 20s pulse width tj = 175 c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c ) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 14a
4 www.kersemi.com IRFR3911/irfu3911 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 5 10 15 20 25 0 2 5 7 10 12 q , total gate char g e ( nc ) v , gate-to-source voltage (v) g gs i = d 8.4a v = 20v ds v = 50v ds v = 80v ds 0.0 0.5 1.0 1.5 2.0 v sd , source-todrain voltage (v) 0.10 1.00 10.00 100.00 i sd , reverse drain current (a) t j = 25 c t j = 175 c v gs = 0v 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) tc = 25 c tj = 175 c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
www.kersemi.com 5 IRFR3911/irfu3911 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. v gs + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 175 0 3 6 9 12 15 t , case temperature ( c ) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
6 www.kersemi.com IRFR3911/irfu3911 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 24 48 72 96 120 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 3.4a 5.9a 8.4a
www.kersemi.com 7 IRFR3911/irfu3911 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet ? power mosfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit r g v dd ? dv/dt controlled by r g ? driver same type as d.u.t. ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer *
8 www.kersemi.com IRFR3911/irfu3911 d-pak (to-252aa) package outline dimensions are shown in millimeters (inches) d-pak (to-252aa) part marking information 6.73 (.265) 6.35 (.250) - a - 4 1 2 3 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 4.57 (.180) 2.28 (.090) 2x 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) m in . 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - s o u r c e 4 - d r a in 10.42 (.410) 9.40 (.370) notes: 1 d imension ing & tolerancin g per ansi y 14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r m s t o je d e c o u t lin e t o -252 a a . 4 dimensions show n are before solder dip, sold er d ip max. +0.16 (.006). irf u120 916a lot code assembly example: wi t h as s e mb l y this is an irfr120 year 9 = 1999 dat e code line a we e k 16 in the assembly line "a" as s embled on ww 16, 1999 lot code 1234 part number international logo rectifier 34 12
www.kersemi.com 9 IRFR3911/irfu3911 i-pak (to-251aa) package outline dimensions are shown in millimeters (inches) i-pak (to-251aa) part marking information 6.73 (.265) 6.35 (.250) - a - 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010 ) m a m b 2.28 (.090) 1.14 (.045) 0.76 (.030) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - source 4 - d r a in notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r ms to je d e c o u t lin e to -25 2a a . 4 d im e n s io n s s h o w n a r e b e f o r e s o l d e r d ip , solder dip max. +0.16 (.006). 9.65 (.380) 8.89 (.350) 2x 3x 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 4 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018) we e k 19 line a ye ar 9 = 1999 dat e code part number in the assembly line "a" as s embled on ww 19, 1999 lot code 5678 rectifier logo international assembly lot code 56 78 example: with assembly this is an irfr120 irf u120 919a
10 www.kersemi.com IRFR3911/irfu3911 d-pak (to-252aa) tape & reel information dimensions are shown in millimeters (inches) tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch repetitive rating; pulse width limited by max. junction temperature. i sd 8.4a, di/dt 320a/s, v dd v (br)dss , t j 175 c notes: starting t j = 25 c, l = 1.9mh r g = 25 ? , i as = 8.4a. pulse width 300s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss * when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994.
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